Department of Physics

Prof. Dr. Md. Shahjahan

Blood Group:

Professor

Phone: +88-01716113968

E-mail: shahjaphys@yahoo.com

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Current Research working Topic


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Short Biography


  • I am currently serving as a Professor in the Department of Physics at Gopalganj Science and Technology University (GSTU), Gopalganj. My academic journey began with my S.S.C. in 1988 from Naldanga Woomesh Chandra High School and H.S.C. in 1990 from Carmichael College, Rangpur. I earned both my B.Sc. (Hons.) and M.Sc. degrees in Physics from the University of Rajshahi in 1993 and 1994, respectively, securing First Class 1st position in both. Higher studies took me to Japan, where I was awarded my Doctor of Engineering degree from Toyohashi University of Technology in 2003.

    I started my teaching career as a Lecturer in the Department of Physics at the University of Rajshahi in 1998, where I was later promoted to Assistant Professor (2004) and Associate Professor (2006). Alongside my teaching, I worked as a Doctoral Research Student and Postdoctoral Researcher at Toyohashi University of Technology, Japan, between 2000 and 2004. In September 2011, I joined GSTU as an Associate Professor and was subsequently promoted to Professor in March 2012.

    Throughout my administrative career at GSTU, I have held several key roles, including Chairman of the Department of Physics (2022–Present) and former Chairman of the Department of Electronics and Telecommunication Engineering (2011–2022). I have also served as the Dean of both the Faculty of Science and Faculty of Engineering (3 years each), Registrar (in Charge) for 1.5 years, Proctor for 4 years, Provost of Bijoy Dibos Hall for 4 years, and a member of the Regent Board for 7 years. To date, I have authored 42 peer-reviewed scientific publications and presented my research at 9 international conferences across countries such as the USA, Japan, France, and Singapore. My core research focus encompasses thin-film fabrication, nanoelectronics, semiconductor device characterization, and solar cell applications.

Current Research


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Research Interests


  • Electronic Materials Thin films

Degree Name Group/Major Subject Board/Institute Country Passing Year

PhD (Doctor of Engineering), M.Sc., B.Sc. (Hons.)

Doctor of Engineering, Toyohashi University of Technology, Japan

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M. Sc., Rajshahi University

B. Sc. (Hons.), Rajshahi University

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Course Material


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Publication TypePublication TitlePublished Year
JournalInfrared Spectra of xLi2O.ySiO2zCaO(1-x-y-z)B2O3 glasses. Md. Emran Hossain, Md. Rafiqul Ialam, R. Majumder, Goshtha Gopal Biswas, Md. Shahjahan, Mst. Halima Khatun, Md. Rafiqul Ahsan, M. Golam Mortuza, Bulletin of Materials Science, publication under process.2022
JournalDesign and numerical analysis of a dispersion-flattened fabrication-friendly PCF-based THz waveguide. Farjana Imam, Sandipa Biswas, Md. Shahjahan, Halima Khatun, Rasel Ahmed, Abdullah Al-mamun Bulbul, Journal of Optics volume 51, pages 371–378 (2022)2022
Journal“Effect of Ni-Doping on the Optical and Electrical Properties of Tin Oxide Thin Films Deposit by Spray Pyrolysis Method” Md. Rubel Sarkar, Mst. Halima Khatun, M. K. R. Khan, Md. Shahjahan; International Journal of Science and Research (IJSR) Volume 8 Issue 7, July 20192019
JournalEffect of Cd Doping on the Structural, Optical and Electrical Properties of ZnO Thin Films Deposited by Spray Pyrolysis Technique” Sajal Khan, Halima Khatun, Mousumi Kundu and Md.Shahjahan; IOSR Journal of Applied Physics, Volume 11, Issue 3 Ser. I (May. –June. 2019), PP 50-572019
Journal“Structural Characterization of Cu-doped ZnO (Zn1-xCuxO) Using Solid State Reaction Method.” Sharmin Aktar Mukta, Halima Khatun, Md. Shahjahan; IOSR Journal of Applied Physics, Volume 10, Issue 4 Ver. III ( 2018), 38-432018
JournalStudy of the morphology, photoluminescence and photoconductivity of ZnO–CdO nanocrystals A M M Tanveer Karim , M Mozibur Rahman , M Shahjahan and M K R Khan, Mater. Res. Express 2 (2015) 0364022015
JournalEffect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films Sonet Kumar Saha , M. Azizar Rahman; M. R. H. Sarkar , M. Shahjahan , and M. K. R. Khan, Vol. 36, No. 3 Journal of Semiconductors March 20152015
JournalNano wall growth and structural, electro-optical characterization of spray pyrolytic cobalt oxide thin films M. M. Islam1, M. G. M. Choudhury2, M. M. Rahman3, M. K. R. Khan3,*, M. Shahjahan4, K. Uddin5, Int. J. Thin Fil. Sci. Tec. 4, No. 1, 1-5 (2015)2015
JournalElectron impact double ionization cross-sections of heavy elements M R Talukder, M Shahjahan and M A Uddin, , Phys. Scr. 85, 015301 (2012).2012
JournalDeposition and Characterization of p-Cu2O Thin Films (Submitted: July 18, 2012; Accepted for Publication: M. Rasadujjaman , M. Shahjahan , M. K. R. Khan and M. M. Rahman, SUST Journal of Science and Technology, Vol. 20, No. 6, 2012; P:1-72012
JournalElectron impact ionization in K?, L?, and M?shells of atomic targets MAR Patoary, M Alfaz Uddin, AKF Haque, M Shahjahan, AK Basak, BC Saha International Journal of Quantum Chemistry, Volume 111, Issue 5, pp. 923-936, 20112011
Journal“Electron impact inner-shell ionization of atoms” A. K. F. Haque, M. A. Uddin, M. Shahjahan, M. R. Talukder, A. K. Basak, B. C. Saha, Advances in Quantum Chemistry, Vol 61, 20112011
Journal“Effect of Al -doping on optical and Electrical Properties of Spray Pyrolytic Nano-crystalline CdO Thin films” M. K. R. Khan, M Azizar Rahman, M. Shahjahan, M. Mozibur Rahman, M. A. Hakim, D. Kumar Saha, J. Uddin Khan, Current Applied Physics 10 (2010) pp.790-796, doi: 10.1016/j.cap.2009.09.016 View2010
Journal“Generalized Kolbenstvedt Model for Electron impact Ionization of K-, L- and M- shell Ions” A. K. F. Haque, M. Shahjahan, M. A. Uddin, M. A. R. Patoary, A. K. Basak, B. C. Saha, and F. B. Malik; Phys. Scr. 81 (2010) pp. 0453012010
Journal“An Extended Empirical Model for Inner-shell Ionization of Atoms” A. K. F. Haque, M.R. Talukder, M. Shahjahan, M, A. Uddin,A. K. Basak, and B. C. Saha, J. Phys. B: At. Mol. Opt. Phys.43 (2010) 1152012010
Journal“Electron Impact Ionisation in K-, L- and M-shell of Atomic Targets” M. A. R. Patoary, M. Alfaz Uddin, A. K. F. Haque, M. Shahjahan, A. K. Basak, and B. C. Saha, Int. J. Quant. Chem., DOI: 10.1002/qua.22456 (2010) View2010
Journal“TEM study of RTD Structure Fabricated with epi-Si/?-Al2O3 Heterostructure” M. Shahjahan, M. H. Khatun , K. Sawada and M. Ishida; Thin Solid Films, 518 (2010) 2295–22982010
Journal“Electrical, Magnetic and Dielectrical Properties of Zn1-x CdxO Synthesis System” M. Kamruzzan, MKR Khan, M. M. Rahman, M. A. S. Karal, M. Shahjahan, and M. Rafiqul Ahsan, Int. J. of Modern Physics2010
Journal"Synthesis of Thick TiO2 Nanotube Arrays on Transparent Substrate by Anodization Technique" S. Biswas, M. Shahjahan, M. F. Hossain, and T. Takahashi, Electrochemistry Communications, 12 (5) (2010) 668-6712010
JournalEffect of Al-doping on optical and electrical properties of spray pyrolytic nano-crystalline CdO thin films; Effect of Al-doping on optical and electrical properties of spray pyrolytic nano-crystalline CdO thin ?lms M.K.R. Khan, M. Azizar Rahman, M. Shahjahan, M. Mozibur Rahman, M.A. Hakim, Dilip Kumar Saha, Jasim Uddin Khan; Current Applied Physics, 10(3): (2010), pp.790-7962010
Journal“Empirical Model for the Electron Impact K-shell Ionization of Atoms” M. A.R. Patoary, M. A. Uddin, A. K. F. Haque, M. Shahjahan, A. K. Basak and M. R. Talukder, B. C. Saha, Int. J. Quantum Chem. 109 (2009) pp. 897–9062009
Journal“Modified Version of Revised Deutsch-Mark model for Electron Impact K-shell Ionization Cross Sections of Atoms at Relativistic Energies M. A. Patoary, M. Alfaz Uddin, A. K. F. Haque, M. Shahjahan, A. K. Basak and M. R. Talukder, B,C. Saha, Int. J. Quantum Chem. 109 (2009) pp. 14422009
Journal“Optical and Photocatalytic Properties of ZnO:Al Nano-wall Structure Deposited on Glass Substrate by Spray Pyrolysis” M. Shahjahan, M. K. R. Khan, M. F. Hossain, S. Biswas and T. Takahashi, Structural, , J. Vac. Sci. Technol. A-Vol 27, No. 4 (2009) pp. 885-8882009
Journal“Fabrication of Dye-sensitized Solar Cells with TiO2 Photoelectrode Prepared by Sol-gel Technique with Low Annealing Temperature” M. F. Hossain, S. Biswas, M. Shahjahan, Arpi Majumder, and T. Takahashi; J. Vac. Sci. Technol. A 27(4) (2009) pp. 1042-10462009
Journal“Investigation of Photocatalytic Activity of TiO2/WO3 Bilayered Thin Films with Various Amounts of WO3 Exposed Surface” S. Biswas, M. F. Hossain, M. Shahjahan, K. Takahashi, and T. Takahashi, A. Fujishima; J. Vac. Sci. Technol. A 27(4) (2009) pp. 880-8842009
Journal“Study of Sol-gel Derived Porous ZnO Photoelectrode for the Application of Dye-sensitized Solar Cells” M. F. Hossain, S. Biswas, M. Shahjahan, and T. Takahashi; J. Vac. Sci. Technol. A 27(4) (2009) pp. 1047 - 10512009
Journal“Synthesis and Characterization of Zn1-x-y CdxLiyO Solid Solution” M. Kamruzzaman, M. K. R. Khan, M. M. Rahman, M. A. S. Karal, M. Shahjahan and M. G. M. Chowdhury, The Nucleus 46 (2009) (1-2).2009
ConferenceAVS-2009, Boston, USA2009
Journal“Studies on the Thermoelectric effect in Semiconducting ZnTe Thin films” M. S. Hossain, R. Islam, M. Shahjahan, and K. A. Khan; European J. of Physics, 19 (2008) pp. 1114-11212008
Journal“Binary Encounter Model for the Electron Impact K-shell Ionization of Atoms” M. A. R. Patoary, M. Alfaz Uddin, A. K. F. Haque, M. Shahjahan, A. K. Basak and B. C. Saha, Int. J. Quantum Chem. 108, (2008) pp. 13262008
Journal“Structural and Dielectric Properties of Zn1-x-y CdxLiyO Solid Solution” M. Kamruzzaman, M. K. R Khan, M. M. Rahman, M. Shahjahan and M. A. S. Karal; Journal of Bangladesh Academy of Sciences, 32, No. 2 (2008)2008
Conference“TEM Study of RTD Structure Fabricated with epi-Si/g-Al2O3 Heterostructure” - M. Shahjahan, H. Khatun Mst., K. Sawada, M. Ishida, International Conference on Silicon Heterostructure and Epitaxy (ICSI-5), 2007, Marseille, France2007
Journal“Capacitance–voltage Characteristics and Switching Time of Double Barrier Resonant Tunneling Diode Fabricated with epi-Si and g-Al2O3” M. H. Khatun, M. Shahjahan, K. Sawada, M. Ishida; Physica E 36 (2007) pp.123–1272007
Conference“Capacitance-Voltage Characteristics and Switching Time of Double Barrier Resonant Tunneling Diode Fabricated with Epi-Si/g-Al2O3 Heterostructure” M. Shahjahan, H. Khatun Mst., K. Sawada and M. Ishida, Asia-Pacific conference on Transducers and Micro-Nano Technology, 2006, Singapore2006
Journal“Investigation of Nanocrystalline Epi-Si/g-Al2O3 Heterostructure Depositied on Si Substrate by Spectroscopic Ellipsometry” M. H. Khatun M. Shahjahan, R. Ito, K. Sawada and M. Ishida; Thin Solid Films Vol. 508 (2006) pp. 65-692006
Journal“Electrical Characteristics of epitaxial g-Al2O3/Si for Quantum Tunneling Device” J.-S. Kim, M. Shahjahan, M.H. Khatun, K. Sawada, M. Ishida; Jpn. J. Applied Phys. Vol.45, No. 6A, (2006) pp. 5107-51092006
Journal“Fabrication of Crystalline HfO2 High-k Dielectric Films Deposited on Crystalline g-Al2O3 Films” T. Okada, M. Shahjahan, K. Sawada and M. Ishida; Jpn. J. of Appl. Phys.,Vol. 44, No. 4B, (2005), pp. 2320–23222005
Conference“Investigation of Nanocrystalline Epi-Si/g-Al2O3 Heterostructure Deposited on Si Substrate by Spectroscopic Ellipsometry” Mosammat Halima Khatun, Mohammad Shahjahan, Ryoki Ito, Kazuaki Sawada and Makoto Ishida, International Conference on Silicon Heterostructure and Epitaxy (ICSI-4), Hyogo, Japan 20052005
Journal“Current voltage Characteristics of g-Al2O3 / Si Resonant Tunneling Diodes with Different Quantum Well Thicknesses” M. H. Khatun. M. Shahjahan, R. Ito, K. Sawada and M. Ishida; Jpn. J. Appl. Phys. Vol. 44, No. 7A, (2005) pp. 4795-47982005
Journal“Fabrication of metal-Oxide-Semiconductor Field Effect Transistors using Crystalline g-Al2O3 Films as the Gate Dielectrics” T. Okada, K. Sawada, M. Ishida and M. Shahjahan; Appl. Phys. Lett. Vol. 85, No. 21 (2004) pp. 5004-50062004
Journal“Effect of Annealing on the Physical and Electrical Properties of Ultrathin Crystalline g-Al2O3 High-k Dielectric Deposited on Si-Substrates” M. Shahjahan, T.i Okada K. Sawada and M. Ishida; Jpn. J. Appl. Phys. Vol. 43, 8A (2004) pp.54042004
Conference“Investigation of High-k Crystalline g-Al2O3 /Si interface by Spectroscopic Ellipsometry” M. Shahjahan, H. Khatun Mst., T. Okada, K. Sawada and M. Ishida, International Conference on Solid Films and Surfaces (ICSFS-12, 2004), Hamamatsu, Japan2004
Conference“Variation of peak current density of double barrier resonant tunneling diode fabricated by epi-Si/g-Al2O3 heterostructures” M. Shahjahan, R. Ito, K. Sawada and M. Ishida, Domestic conference of the Japan Society of applied physics (The 64th Autumn Meeting, 2003) 12.2, ZF- / III, pp.12532003
Conference“Effect of Nitrogen Annealing on the Electrical Properties of Ultrathin Crystalline g-Al2O3 High-k Dielectric Films Deposited on Si(111) Substrates” - M. Shahjahan, T. Okada, K. Sawada and M. Ishida, Solid State Device and Materials-2003 (SSDM-2003)2003
Conference“Dependence of Peak to Valley Current Ratio on the Well Thickness of a Double Barrier Resonant Tunneling Diode Fabricated by epi-Si / g-Al2O3Heterostructures” - M. Shahjahan, R. Ito, K. Sawada and M. Ishida, Silicon Nanoelectronics Workshop-2003 (IEEE), Kyoto, Japan2003
Conference“Effect of nitrogen annealing of ultrathin (~3 nm) crystalline Al2O3 films” M. Shahjahan, T. Okada, K. Sawada and M. Ishida, Domestic conference of the Japan Society of applied physics (The 50th Spring Meeting, 2003) 11.3, ZX- / II, pp.8922003
Journal“Anomalous Resistive Transition and Frequency Dependent Dielectric Constant of Zn1-xMxO [M = Li (Mg, Ba)] system” M. K. R. Khan, M. Mozibur Rahman, S. Javed Mia and M. Shahjahan; Indian J. of Pure and Appl. Phys. Vol 41 (2003) pp. 211-2162003
Journal“Fabrication and Electrical Characterization of Ultrathin Crystalline Al2O3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy” - M. Shahjahan, N. Takahashi, K. Sawada and M. Ishida; Jan. J. Appl. Phys. Vol. 41 (2002) pp. L1474 – L14772002
Conference“Dependencies of Peak to valley current ratio on the well thickness of a double barrier resonant tunneling diode fabricated by epi-Si/g-Al2O3 heterostructures” M. Shahjahan, R. Ito, K. Sawada and M. Ishida, Domestic conference of the Japan Society of applied physics (The 63rd Autumn Meeting, 2002) 12.2, P9- / III, pp.12032002
Journal“Fabrication of Resonance Tunneling Diode by g-Al2O3 / Si Multiple Heterostructures” M. Shahjahan, Y. Koji, K. Sawada and M. Ishida, Jpn. J. Appl. Phys. Vol. 41 No. 4B (2002) pp. 2602 – 26052002
Conference“Fabrication and Electrical Characterization of Ultrathin Epitaxial g-Al2O3gate Dielectric Films on Si(100) by Molecular Beam Epitaxy (MBE)” - Shahjahan Mohammad, Takahashi Nariya, Sawada Kazuaki, Ishida Makoto, International Workshop on Gate Insulator 2001(IWGI-2001), Tokyo, Japan2001
Conference“The Formation of Resonance Tunnel Device by g-Al2O3 / Si Multiple Heterostructure” - Y. Koji, M. Shahjahan, R. Ito, K. Sawada and M. Ishida, Solid State Device and Materials-2001 (SSDM-2001) Tokyo, Japan2001
Conference“Electrical properties of ultrathin Al2O3 fabricated on Si(100) substrates by MBE method” M. Shahjahan, N. Takahashi, R. Ito, K. Sawada and M. Ishida, Domestic conference of the Japan Society of applied physics (The 62nd Autumn Meeting, 2001) 11.3, C- / II, pp.6422001
Journal“Semi-empirical Formulae for Electron Impact Ionization Cross-sections” M. Alfaz Uddinn, F. N. Islam, M. Shahjahan and M. G. M. Choudhury; Indian J. Pure and Appl. Phys., Vol. 39 (2001) pp. 205-2122001
Papers Not Available
Papers Not Available

Book/Book Chapter

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Book not Found!